🔬 Laboratory Facilities
Advanced equipment for cutting-edge materials research
17
Instruments
17
Operational
4
Categories
PLD Chamber 1A
GrowthAdvanced pulsed laser deposition with RHEED
PLD Chamber 1A
- Temperature range: RT to 800°C
- Base pressure: 10⁻6 mbar
- Multiple target capability
- In-situ RHEED monitoring
PLD Chamber 1B
GrowthPulse laser deposition Chamber 1B
PLD Chamber 1B
- Temperature range: RT to 800°C
- Base pressure: 10⁻6 mbar
- Multiple target capability
PLD Chamber 1C
GrowthPulse laser deposition Chamber 1C
PLD Chamber 1C
- Temperature range: RT to 800°C
- Base pressure: 10⁻6 mbar
- Multiple target capability
PLD Chamber 1D
GrowthPulse laser deposition Chamber 1D
PLD Chamber 1D
- Temperature range: RT to 800°C
- Base pressure: 10⁻6 mbar
- Multiple target capability
Hybrid PLD System
GrowthAdvanced pulsed laser deposition attach with RF and DC Sputtering
Hybrid PLD System
- Temperature range: RT to 800°C
- Base pressure: 10⁻7 mbar
- Multiple target capability
- Attach with RF and DC sputtering
DC and Rf Sputtering
GrowthAdvance DC and RF Sputtering with PLD attach
DC and Rf Sputtering
- Temperature range: RT to 800°C
- Base pressure: 10⁻7 mbar
- Multiple target capability 4 in DC and 1 in Rf
- Attach with PLD system
DC sputtering
GrowthDC sputtering for metal deposition
DC sputtering
- Temperature: RT
- Base pressure: 10⁻6 mbar
- Target - Platinum, GolD, Silver
Sputtering System 2
GrowthSputtering DC and RF system with collaboration with Material engineering
Sputtering System 2
- Temperature: RT-800 C
- Base pressure: 10⁻7 mbar
- Target - BFO, STO, LSMO
Hall Measurement System
ChacaterizationAdvance technique for Semiconductor
Hall Measurement System
- Temperature range: 80K to 350K
- Bulk Concentration
- Mobility
- Resistivity
Lab build Cryo
ChacaterizationLab build Cryo system for transport measurement
Lab build Cryo
- Temperature range: 40K to 600K
- Lock-in-amplifer for Resistance measurement
- Lakeshore temperature controller
- Labview base user interface
Probe station 1
ChacaterizationAdvance method for Dielectric chacaterization
Probe station 1
- Temperature range: RT-500
- Integrated with impedence analyser
- Integrated with SMU
- Integrated with PE-Loop tracer
Probe station 2
ChacaterizationAdvance characterization for neuromorphic measurement
Probe station
- Temperature range: RT to 500°C
- PE Loop tracer
- impedence analyser
- SMU 2400, SMU 236
laser 1
SupportLaser for PLD system
Laser 1
- KrF laser
- Wavelength - 248nm
laser 2
SupportLaser for Hybrid PLD system
Laser 2
- KrF laser
- Wavelength - 248nm
Atomic Force Microscopy
ChacaterizationAdvance technique for Topography mrasurement
Atomic Force Microscopy
- PFM
- SKFM
- MFM
- Tomography
Clean Room
SupportDevice Fabrication Lab
Clean Room
- Lithography
- Wire Bonding
- Fumehood
- Spin coater
Wire Bonding
DeviceDevice Fabrication
Wire Bonding
- Aluminium Wire
- Gold Wire
- Heater range RT - 100C
Work station
SupportInstrument for measurement
Work station
- Agilent impedence analyser
- Radiant PE Loop tracer
- Keysight impedence analyser
- Keithley SMU 2400, SMU 236
Tube Furnace
SupportFor Treatment of Substrate
Tube Furnace
- Oxygen gas Flow
- Temperature - Rt - 1300C
Muffle Furnace
SupportFor Pellate formation
Muffale Furnace
- Temperature - Rt - 1300C
Specifications:
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